I D25
PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 24N80P
IXFK 24N80P
IXFT 24N80P
V DSS = 800 V
= 24 A
R DS(on) ≤ 400 m Ω
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
800
800
± 30
V
V
V
V GSM
Transient
± 40
V
G
D
S
D (TAB)
I D25
T C = 25 ° C
24
A
I DM
I AR
E AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
55
12
50
1.5
A
A
mJ
J
TO-268 (IXFT) Case Style
G
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 Ω
T C = 25 ° C
10
650
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
S
TO-264 AA (IXFK)
D (TAB)
M d
Mounting torque (TO-247 & TO-264)
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
G
TO-268
TO-264
5
10
g
g
D
S
(TAB)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
Features
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
800 V
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.0
± 100
25
1000
V
nA
μ A
μ A
rated
Low package inductance
- easy to drive and to protect
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
400
m Ω
Easy to mount
Space savings
High power density
? 2006 IXYS All rights reserved
DS99572E(07/06)
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